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AIN Substrate
Aluminium Nitride(AIN) ceramic is an ideal substrate and package material with high thermal conductivity and can be widely used for laser diode submount, high power optoelectronic components, microwave power devices, Integrated circuit , multichip modules MCM, etc.
It has superior thermal conductivity, high electrical insulation, and similar thermal expansion coefficient with silicon-Si.
AIN Metallized Thin Film Data:
Square resistance: <5 mΩ/SQ
Square resistance: <5 mΩ/SQ
Adhesion strength: >2.5 kgf/mm2
Weldability(coated with AuSn solder): Excellent
Max. wafer size: 50mm×50mm
Min. line width: 20µm/20µm
Thin Film Metal: Ti-Pt-Au, Ti-Ni-Au etc
AIN Substrate Data:
Thermal conductivity: >170 W/M.K
Thermal conductivity: >170 W/M.K
Linear expansion coefficient: 4.4×10-6/℃
Density: 3.26g/cm3
Density: 3.26g/cm3
Volume resistivity: >1014Ω.cm
Dielectric constant: 8.6
Dielectric loss tanδ: 3×10-4
Breakdown voltage: >15kV/mm
Dielectric loss tanδ: 3×10-4
Breakdown voltage: >15kV/mm
Folding strength: 32kgf/mm2
Surface roughness: 0.2-0.63µm
Warpage: 16.5µm /50mm
Wafer size: 160mm×90mm
Please send us your drawing of customized design products.
Please send us your drawing of customized design products.
