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AIN Thin Film Metallization Submount
Model:ALN
AIN Thin Film Metallization Submount/AIN Metallized Carrier/AIN metallized substrates
- Introduction
- Relevant
- Aluminium Nitride(AIN) ceramic is an ideal substrate and package material with high thermal conductivity and can be widely used for laser diode submount, high power optoelectronic components, microwave power devices, Integrated circuit , multichip modules MCM, etc.It has superior thermal conductivity, high electrical insulation, and similar thermal expansion coefficient with silicon-Si.
AIN Metallized Thin Film Data:
Square resistance: <5 mΩ/SQAdhesion strength: >2.5 kgf/mm2Weldability(coated with AuSn solder): ExcellentMax. wafer size: 50mm×50mmMin. line width: 20µm/20µmThin Film Metal: Ti-Pt-Au, Ti-Ni-Au etcAIN Substrate Data:
Thermal conductivity: >170 W/M.KLinear expansion coefficient: 4.4×10-6/℃
Density: 3.26g/cm3Volume resistivity: >1014Ω.cmDielectric constant: 8.6
Dielectric loss tanδ: 3×10-4
Breakdown voltage: >15kV/mmFolding strength: 32kgf/mm2Surface roughness: 0.2-0.63µmWarpage: 16.5µm /50mmWafer size: 160mm×90mm
Please send us your drawing of customized design products.